Journal of Zhejiang University SCIENCE A
(Monthly)

2006   Vol. 7   No. 11   p. 1956-1960

CdS/SiO₂ nanowire arrays and CdS nanobelt synthesized by thermal evaporation

YU Ling-min^†1,2, ZHU Chang-chun², FAN Xin-hui¹, QI Li-jun¹, YAN Wen¹

(¹School of Materials and Chemical Engineering, Xi’an Institute of Technology, Xi’an 710032, China)
(²School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China)
^†E-mail: ylmyl@163.com
Received Dec. 8, 2005 revision accepted May 29, 2006

Abstract: CdS/SiO₂ nanowire arrays and CdS nanobelts were synthesized by thermal evaporation of CdS and CdO mixture powders, with highly selective etching occurring on the silicon substrate surfaces. Study of the growth mechanism of CdS/SiO₂ nanowire arrays and the growth process of CdS nanobelts showed that the growth of CdS dendrites plays an important role in the formation of CdS/SiO₂ nanowire arrays, and that the mechanism of CdS/SiO₂ nanowire arrays growth was in good agreement with “self-assembling nanoelectrochemistry”. In the thermal evaporation process, an interaction between Si from silicon substrate and Cd took place.

Key words: CdS/SiO₂ nanowire arrays, CdS nanobelts, CdS dendrites, Self-assembling nanoelectrochemistry
doi:10.1631/jzus.2006.A1956             CLC number: TQ12

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